GaN LED on sapphire substrate to generate a typical GaN LED structure consists of sapphire substrate, through non-doped GaN buffer layer, N type GaN layer. Among them, the active layer with InGaN / GaN multi-quantum well (MQWS) and HB datasheet and P-type GaN layer. Part of the P-type GaN layer and HB price and the active layer can be removed by ion etching, so that N-type GaN layer to form ohmic contacts. In FLIP-CHIP LED structure, the light from the sapphire substrate. So there is a good reflector and HB suppliers and P-type GaN layer contact is very important. This reflector LED performance and quality are closely dependent. This reflection must have high reflectance, and P-type GaN layer contact resistance is lower. Considering only the reflectivity, the aluminum and mercury is the best material. But in addition to reflecting capa...

HB-LED as a light source for lighting has the following advantages. less power consumption: luminous efficiency of 75 Im / W of LED power consumption than equivalent incandescent brightness by 80%. long life: the product life of up to 50,000 hours, 24 h continuous light can be used for 7 years. nanosecond response time, brightness and HB datasheet and color to make it easy to dynamically control: enables dynamic color changes, and HB price and digital control. design space: can be realized with the construction of the organic integration, to achieve the effect I saw the light but not light. environmental protection: no toxic metal mercury, no infrared and HB suppliers and ultraviolet radiation. color: different wavelengths produce different colored light, bright and saturated, without filter, available red, green, and...