Semiconductor materials and DS34LV86TM datasheet and processes as the continuous development of microwave / millimeter-wave output power of power semiconductor devices increasing magnitude, L-band power transistors has reached kW pulsed power magnitude; X-band power GaAs field Effect of pipe to tens of watts of continuous arrival, pulse power of 500W. However, limited by the physical characteristics of the semiconductor, the output power of a single solid-state device is still limited. Using chip synthesis, circuit synthesis and DS34LV86TM price and spatial power combining technology synthesis multi-output power solid-state devices with the overlay of higher output power is an effective way. 1968 Nian Josenhans first proposed the concept of chip-level power combining. Subsequently, the late 20th century, 70, Rucker implemented fir...