In Electronic Infomation Category: 3 | on September 07,2011
When the drain between a source connected to + VDS, the drain from the source of a channel consisting of an N-type semiconductor region produces a lateral potential gradient: zero potential source regions, drain regions for the + VIB, the channel potential from source to drain gradually increased. Different locations in the channel, the channel thickness, the source of the most turbulent thick, drain the thinnest, and
39 datasheet and gradually increased. Different locations in the channel, the channel thickness, the thickness of the source, drain the thinnest, when VDS increases to gate-leakage potentiometer VGS = VLS = VGS (rh), the drain end of the pre-pinch-off. The pinch-off area has become a source of leakage flow path between the electrical resistance of the largest area. V Lu at any point increases...
Read the rest of this entry
39 datasheet39 suppliers39 Price