A. The principle and 2SK2134 datasheet and structure , MOS transistor in a CMOS integrated circuit N-channel enhancement type MOS transistor and 2SK2134 price and the P-channel enhancement MOS transistor. N-channel enhancement type MOS transistor structure shown in Figure 2.13. A low impurity concentration P-type silicon substrate (B), in which the diffusion of two N + regions as electrodes, which are called source (S) and 2SK2134 suppliers and drain (D). Semiconductor surface covered with a Si02 insulating layer on the insulating layer between the drain-source and then sputtering a layer of metallic aluminum, known as the gate (G). G and S-voltage drain-source pole between the two back of the PN junction, so there will not be a drain current after the voltage is between the D, S. Assume that D, S between the short-circuit, G, S-plus positive volta...