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114. Programmable memory EPROM structure and can be re-programming work?

In Electronic Infomation Category: 1 | on February 09,2012

Is the use of floating gate EPROM programmable memory production, its storage units to use more N-channel stacked-gate MOS (SIMOS), in addition to the control gate, there is no outer lead of a gate is floating gate. When there is no charge on the floating gate when the control voltage coupled to the control gate, MOS MOSFET; and 114 datasheet and when a negative charge on the floating gate when the substrate surface induced a positive charge, which makes the MOS turn-on voltage becomes higher tube If the control gate coupled to the same control voltage, MOS tube is still in a closed state, which SIMOS tube floating gate can be used whether the accumulation of negative charge to store binary data.

data is written before the floating gate is not charged, to make the floating gate with a negative charge, must SIMOS tube leakage, the gate with a sufficiently high voltage (eg 25 V), the leakage extreme and 114 price and the PN junction between substrate reverse breakdown, resulting in a large number of high-energy electrons. These electrons pass through a thin oxide insulation layer stacked on the floating gate to floating gate leaving a negative charge. When the removal of the applied voltage, the floating gate because there is no discharge on the electronic circuit, so that long-term preservation. When irradiated with ultraviolet light or X-rays when the electrons on the floating gate current and 114 suppliers and discharge light, thus restoring the state before writing.

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