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A level shift circuit

In Electronic Infomation Category: A | on April 23,2011

Level shift circuit high voltage and AD7225LR datasheet and low voltage control signals into control signals, low voltage logic level control of high power output, is high voltage device control technology in motor drive, PDP display, OLED display has been widely application. Control technology in the field of high voltage device can be controlled high-voltage output driver circuit and AD7225LR price and integrated circuits, high voltage, high current, high accuracy. In order to provide a great driving capability, usually driven by large tube output stage. Level shift circuit as the connection control circuit and AD7225LR suppliers and output driver stage of the key circuit, on the one hand requires a high drive capability, the drive to meet the requirements of the output stage; the other hand, the level shift circuit is also a high-voltage work, requiring a relatively low quiescent current, thereby reducing power consumption. Conventional level shift circuit to 0 ~ VDD (VDD for the general level) low-voltage control signal is converted to 0 ~ VPP (VPP for the high-voltage level) of the high voltage control signal, used to drive to work under high pressure tube output stage PMOS . In that case, the maximum tube output stage PMOS gate-source voltage of VPP, to ensure the reliability of the transistor must withstand the high voltage VPP, usually by increasing the thickness of gate oxide technology for solving some of the complex, but on the one hand increases technology costs, on the other hand when the voltage is increasing, the technology for solving the difficulty will be greatly improved.

NMOS output stage for the tube, the conventional method is to use 0 ~ VDD low voltage control signals directly drive. With the continuous development process, the control circuit to continuously reduce the operating voltage VDD and the output level of gate oxide thickness of the thick, low level control signal resulting lack of driving ability.

This paper, a new gate voltage level shift control circuit, the use of reverse diode operating characteristics, combined with positive feedback circuit state transition large voltage difference across the diode, the occurrence of reverse breakdown, transient breakdown current large, providing a great deal of drive capability, so that the state fast conversion; state is stable, the voltage difference across the diode less quiescent current is very small, very low quiescent power consumption, the positive feedback for fast state transition, and ultimately design a tube output stage PMOS gate voltage level shift circuit, from 0 ~ VDD to the VP ~ VPP (VP PMOS tube output stage according to the process parameters may be, both to ensure a good turn PMOS control, but also to meet the reliability requirements) level conversion provided for the tube output stage PMOS gate drive voltage. Tube output stage NMOS gate voltage level shift circuit from 0 ~ VDD to 0 ~ VN (VN NMOS output stage according to the process control parameters may be, both to ensure a good NMOS open pipe, but also to meet the reliability requirements) and level shifting for the output stage to provide the gate drive voltage NMOS tube.

1 level shift circuit design

1.1 conventional level shift circuit


Figure 1 Ordinary level shift circuit

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