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IC Electronic information

68. Set a base reverse saturation current ICBO and factors affecting the formation of what?

In Electronic Infomation Category: 6 | on November 24,2011

Set a base reverse saturation current is due to the collector junction is reverse biased, collector-base region and 68 datasheet and the drift of minority carrier movement formed by the current, so it influenced by temperature. At room temperature, low-power germanium tube Iaro about a few microamps to tens of microamps, low-power silicon tube ICBO microamps or less. ICa0 the smaller the better temperature stability, so many events that use silicon tube.

69. Several typical N-channel JEFT what applications?

CS4868 is used as low-noise audio and 68 price and sub audio amplification JEFT; CS4393 is used as analog switches, chopping with the N-channel JEFT; CS146 at 400 MHz below the high input impedance circuit to do with the high-frequency amplification N-channel JEFF; D2302 for weak signals, low-noise preamplifier and 68 suppliers and video signal processing of the N-channel JEFT.

70. the work of the diode junction capacitance impact?

diode junction capacitance of the diode operating frequency has a great influence. The presence of diode junction capacitance, the diode limits the operating frequency. When the voltage across the diode frequency is very high, the diode junction capacitance at high frequency capacitance presented by a small, high-frequency current directly through the junction capacitance, the diode will lose the one-way conductivity. Should be noted that the diode junction capacitance is not a space electric charge ratio of the applied voltage, but the charge voltage increment and the corresponding ratio of increments, so it is showing the AC small signal capacitance. Junction capacitance of the size of the applied voltage, the forward voltage is large, the PN junction diode space charge region is very narrow, equivalent to the capacitor plates from the small, large junction capacitance; the contrary, the reverse voltage is large junction capacitance.

71. JFET (JFET) at high frequencies should consider what issues?

junction FET (JFET) should be considered in the case of high-frequency capacitance between poles. CGS and CGD are two PN junction the junction capacitance, CGD mainly leads distributed capacitance. Junction capacitance CGS and CGD work-related condition, about picofarads; electrode capacitance of the existence of high-frequency FET work have serious implications. CGDs existence as part of the AC signal is fed to the input, may cause the amplifier self-excitation. FET high-frequency applications, often ignored the input resistance and output resistance (they are large).

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