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2. VMOS tube high voltage of the basic structure and what are the reasons?

In Electronic Infomation Category: 2 | on September 30,2011

VMOS tube can not withstand the higher power, VMOS pipe from the structure solved the heat problem can be made of high-power tube, the structure shown in Figure 12-1.

in the gate-source voltage is greater than the turn-on voltage Ur flea U cs (th), in the P region near the V-groove surface oxide layer formed below the inversion layer and LTC4002ES8-4.2 datasheet and phase region, forming vertical conductive channel. Is applied between drain a power source, free electrons from the source along the inflow channel N-type epitaxial layer, N +-type substrate to the drain, formed from the drain to source current ID.

VMOS drain pipe cooling area, easy to install radiator, power dissipation of kilowatts or more; drain-source breakdown voltage of a high maximum operating frequency is high; greater than some value when the drain current (500mA ) when, ID basically a linear relationship with UGS.

LTC4002ES8-4.2 datasheetLTC4002ES8-4.2 suppliersLTC4002ES8-4.2 Price

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